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Si2305CDS
Vishay Siliconix
P-Channel 8 V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
-8
R DS(on) ( Ω )
0.035 at V GS = - 4.5 V
0.048 at V GS = - 2.5 V
0.065 at V GS = - 1.8 V
I D (A) d
- 5.8
- 5.0
- 4.3
Q g (Typ.)
12 nC
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? 100 % R g Tested
? Compliant to RoHS Directive 2002/95/EC
TO-236
(SOT-23)
APPLICATIONS
? Load Switch for Portable Devices
? DC/DC Converter
G
1
S
3
D
S
2
Top View
Si2305CDS (N5)*
G
* Marking Code
Ordering Information: Si2305CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
D
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
-8
±8
- 5.8
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current (10 μs Pulse Width)
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
- 4.7
- 4.4 a, b
- 3.5 a, b
- 20
- 1.4
- 0.8 a, b
1.7
A
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
1.1
0.96 a, b
W
T A = 70 °C
0.62 a, b
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a, c
Maximum Junction-to-Foot (Drain)
t ≤ 5s
Steady State
R thJA
R thJF
100
60
130
75
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 175 °C/W.
d. T C = 25 °C.
Document Number: 64847
S10-0720-Rev. C, 29-Mar-10
www.vishay.com
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